Soft x-ray photoemission studies of the HfO2 ÕSiO2 ÕSi system
نویسندگان
چکیده
Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2 /SiO2 /Si and HfO2 /SiOxNy /Si systems. We obtained a valence-band offset difference of 21.0560.1 eV between HfO2 ~in HfO2/15 Å SiO2 /Si! and SiO2 ~in 15 Å SiO2 /Si!. There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10 Å SiOxNy /Si and HfO2/15 Å SiO2 /Si systems. © 2002 American Institute of Physics. @DOI: 10.1063/1.1450049#
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